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Composite Transistors
XP0121L
(0.425)
Silicon NPN epitaxial planar type
For digital circuits Features
* Two elements incorporated into one package (Transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half
Unit: mm
0.12+0.05 -0.02
0.200.05 5 4
1.250.10 2.10.1
1
2
3
(0.65) (0.65) 1.30.1 2.00.1 10
0.90.1
* UNR121L x 2
Absolute Maximum Ratings Ta = 25C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 150 150 -55 to +150 Unit V V mA mW C C
1: Base (Tr1) 2: Emitter 3: Base (Tr2) EIAJ: SC-88A
0 to 0.1
0.9+0.2 -0.1
Basic Part Number
4: Collector (Tr2) 5: Collector (Tr1) SMini5-G1 Package
Marking Symbol: DB Internal Connection
(C1) 5 Tr1
R2 R2 (4.7 k) (4.7 k)
5
(C2) 4 Tr2
Electrical Characteristics Ta = 25C 3C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio
*
R1 (4.7 k)
1 (B1)
2 (E)
3 (B2)
R1 (4.7 k)
Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small
/Large)
Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k
Min 50 50
Typ
Max
0.1 0.5 2.0 20 0.5 0.99 0.25 4.9 0.2 -30% 0.8 4.7 1.0 150 +30% 1.2
Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency
VCE(sat) VOH VOL R1 R1 / R 2 fT
VCB = 10 V, IE = -2 mA, f = 200 MHz
MHz
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements
Publication date: August 2004 SJJ00304AED
0.20.1
Unit V V A A mA V V V k
1
XP0121L
PT Ta
160
IC VCE
Ta = 25C 0.9 mA
VCE(sat) IC
Collector-emitter saturation voltage VCE(sat) (V)
1 IC / IB = 10 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA
140 120
IB = 1.0 mA
Total power dissipation PT (mW)
120
Collector current IC (mA)
100 80
25C 0.1 Ta = 85C
80
0.3 mA 60 40 20 0.2 mA
40
-25C
0
0
40
80
120
160
0
0
2
4
6
8
10
12
0.01
1
10
100
1 000
Ambient temperature Ta (C)
Collector-emitter voltage VCE (V)
Collector current IC (mA)
hFE IC
Collector output capacitance C (pF) (Common base, input open circuited) ob
300 VCE = 10 V
10
Cob VCB
f = 1 MHz Ta = 25C
IO VIN
10-1 VO = 5 V Ta = 25C
Forward current transfer ratio hFE
250 Ta = 85C 200 25C
Output current IO (A)
1 0 10 20 30 40
150
10-2
100 -25C 50
0
1
10
100
1 000
10-3
0
0.4
0.8
1.2
1.6
2
Collector current IC (mA)
Collector-base voltage VCB (V)
Input voltage VIN (V)
VIN IO
100 VO = 0.2 V Ta = 25C
Input voltage VIN (V)
10
1
0.1
1
10
100
Output current IO (mA)
2
SJJ00304AED
Request for your special attention and precautions in using the technical information and semiconductors described in this material
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the technical information as described in this material. (4) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this material are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This material may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2003 SEP

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